作物学报 ›› 2011, Vol. 37 ›› Issue (06): 1005-1011.doi: 10.3724/SP.J.1006.2011.01005
方长旬,王清水,余彦,黄力坤,吴杏春,林文雄*
FANG Chang-Xun,WANG Qing-Shui,YU Yan,HUANG Li-Kun,WU Xing-Chun,LIN Wen-Xiong*
摘要: 硅能提高植物对生物和非生物胁迫的抗性,水稻是吸收硅较多的作物之一。本研究以UV-B耐性水稻Lemont和UV-B敏感水稻Dular及其硅吸收基因(Lsi1)的转基因水稻为材料,研究硅与水稻耐UV-B辐射的关系。结果发现,自然光照条件下,缺硅培养的UV-B耐性水稻Lemont和UV-B敏感水稻Dular叶片的苯丙氨酸解氨酶(Phenylalanine ammonia lyase, PAL)和光裂解酶(Photolyase, PL)基因的表达以及总酚、类黄酮的含量都分别低于加硅的处理; UV-B辐射后,上述指标在不同硅处理的两水稻中都增加和增强,但缺硅培养的水稻仍显著低于加硅培养的水稻。进一步分别以Lsi1被抑制、增强的两种转基因Lemont水稻,以及Lsi1增强的转基因Dular水稻为材料,采用加硅培养的方式对转基因水稻的上述指标进行研究,结果也发现,抑制水稻Lsi1基因表达,其叶片PAL、PL基因表达也下调,总酚、类黄酮含量降低,此结果与缺硅培养下的野生型植株相似; 增强表达Lsi1基因则结果相反。UV-B辐射后,上述指标也增强和增加,但在相同的水稻品种中仍表现为Lsi1被抑制的植株最低,Lsi1增强的植株最高。研究结果表明,通过调节水稻Lsi1能够改变水稻耐UV-B辐射的能力。
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